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北京绿能芯创电子科技有限公司 (GIET) 是一家专业从事半导体功率器件设计、
制造工艺开发、市场应用、销售的芯片设计公司。核心团队是由一群平均超过 20 年专业半导体经验的海内外精英专家共同组成,工作经历包含中芯国际 ......
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低中压MOSFET
产品编号 |
BVDSS (V) |
ID (A) |
RDS(typ) (mΩ) |
RDS(max) (mΩ) |
Vgs (V) |
封装类型 |
产品规格书 |
GT00502GJ |
20 |
5.8 |
20* |
25* |
0.3 - 1.2 |
SOT23 |
|
GT13003GF |
30 |
130 |
1.3 |
1.6 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT11503GF |
30 |
115 |
1.9 |
2.5 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT09003GF |
30 |
90 |
2.7 |
3.6 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT07003GF |
30 |
70 |
4.5 |
6 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT05003GN |
30 |
50 |
6.5 |
9 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT03503GN |
30 |
35 |
9.5 |
12 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT01003GK |
30 |
10 |
9.5 |
12 |
1-3 |
SOP8 |
|
GT02503GN |
30 |
25 |
14 |
18 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT02103GMD |
30 |
21 |
17 |
20 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT04203GMH |
30 |
42 |
7 |
8.5 |
1-3 |
DFN6*6 |
|
GT14004GF |
40 |
140 |
1.8 |
2.3 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT10004GF |
40 |
100 |
2.3 |
2.8 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT09004GF |
40 |
90 |
4.5 |
5.5 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT04004GN |
40 |
40 |
7 |
9 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT01504GK |
40 |
15 |
7 |
9 |
1-3 |
SOP8 |
|
GT00704GC |
40 |
7 |
16 |
21 |
1-3 |
TO-252 |
|
GT00604GMD |
40 |
6 /-7 |
24/32 |
32/45 |
1-3 |
SOP-8L |
|
GT10006GF |
60 |
100 |
4 |
5.5 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT05006HF |
60 |
50 |
7 |
9 |
2-4 |
PPAK5*6/DFN5*6 |
|
GT03506GN |
60 |
35 |
13 |
18 |
1-3 |
PPAK3*3/DFN3*3 |
|
GT15008HB |
80 |
150 |
2 |
2.6 |
2-4 |
TO-263 |
|
GT13008HB |
80 |
130 |
3.5 |
4.2 |
2-4 |
TO-263 |
|
GT12008GB |
80 |
120 |
3.2 |
4.0 |
1-3 |
TO-263 |
|
GT12008HA |
80 |
120 |
3.7 |
4.5 |
2-4 |
TO-220 |
|
GT08508HA |
80 |
85 |
6.1 |
7.4 |
2-4 |
TO-220 |
|
GT08508HB |
80 |
85 |
6.5 |
7.4 |
2.5-4 |
TO-263 |
|
GT07008HA |
80 |
70 |
10 |
12 |
2-4 |
TO-220 |
|
GT15510GB |
100 |
155 |
2.5 |
3.3 |
1-3 |
TO-263 |
|
GT15010HB |
100 |
150 |
3 |
3.8 |
2-4 |
TO-263 |
|
GT12510GB |
100 |
125 |
3.8 |
4.6 |
1-3 |
TO-263 |
|
GT12510HA |
100 |
125 |
3.8 |
4.6 |
2-4 |
TO-220 |
|
GT12510HB |
100 |
125 |
3.8 |
4.6 |
2-4 |
TO-263 |
|
GT12010GB |
100 |
120 |
5.5 |
7.0 |
1-3 |
TO-263 |
|
GT12010HA |
100 |
120 |
5.5 |
7.0 |
2-4 |
TO-220 |
|
GT12010HB |
100 |
120 |
5.5 |
7.0 |
2-4 |
TO-263 |
|
GT12010GF |
100 |
120 |
5.0 |
6.0 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT09010GA |
100 |
90 |
6.3 |
8.0 |
1-3 |
TO-220 |
|
GT09010GF |
100 |
90 |
6.3 |
8.0 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT08010GA |
100 |
80 |
8.0 |
10.0 |
1-3 |
TO-220 |
|
GT08010GF |
100 |
80 |
7.6 |
9.5 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT01210GK |
100 |
12* |
8.0 |
10.0 |
1-3 |
SOP8 |
|
GT06010GF |
100 |
60 |
11 |
13 |
1-3 |
PPAK5*6/DFN5*6 |
|
GT06010GA |
100 |
60 |
11 |
13 |
1-3 |
TO-220 |
|
GT04510HA |
100 |
45 |
15 |
18 |
2-4 |
TO-220 |
|
GT04510HC |
100 |
45 |
15 |
18 |
2-4 |
TO-252 |
|
GT04510GC |
100 |
45 |
15 |
18 |
1-3 |
TO-252 |
|
110 |
85 |
6.4 |
7.6 |
1.2-2.5 |
PPAK5*6/DFN5*6 |
||
GT15015HB |
150 |
150 |
4.8 |
5.8 |
2-4 |
T0-263 |
备注:以上数据从产品规格书节录,如未能及时更新。以产品规格书的数据为准。
“*”表示芯片在最佳封装形式下所测量的结果。